Invention Grant
- Patent Title: Semiconductor device, silicon wafer and method of manufacturing a silicon wafer
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Application No.: US15820770Application Date: 2017-11-22
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Publication No.: US10566424B2Publication Date: 2020-02-18
- Inventor: Nico Caspary , Helmut Oefner , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Design IP
- Priority: DE102015114177 20150826
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/167 ; H01L29/739 ; H01L29/78 ; H01L29/861 ; C30B15/04 ; C30B29/06 ; C30B30/04

Abstract:
A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.
Public/Granted literature
- US20180097064A1 SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A SILICON WAFER Public/Granted day:2018-04-05
Information query
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