In a power semiconductor device of the application a total number n of floating field rings (10_1 to 10_n) formed in a termination area is at least 10. For any integer i in a range from i=2 to i=n, a ring-to-ring separation di,i−i between an i-th floating field ring and a directly adjacent (i−1)-th floating field ring, when counting the floating field rings (10_1 to 10_n) along a straight line starting from a main pn-junction and extending in a lateral direction away from the main pn-junction, is given by the following formula: di,i−1=d1,0+Σj=1j=i−1 Δj for i=2 to n, wherein d1,0 is a distance between the innermost floating field ring (10_1) closest to the main pn-junction and the main pn-junction, and wherein: Δzone1−0.05·Δzone2 0.1 μm, and −Δzone2/2