Electrically driven light-emitting tunnel junctions

Invention Grant

US10566492B2 Electrically driven light-emitting tunnel junctions 有权

Patent Title: Electrically driven light-emitting tunnel junctions
Application No.: US15781652

Application Date: 2016-12-07
Publication No.: US10566492B2

Publication Date: 2020-02-18
Inventor: Farnaz Niroui , Thomas Stephen Mahony , Vladimir Bulovic , Jeffrey H. Lang
Applicant: Massachusetts Institute of Technology
Applicant Address: US MA Cambridge
Assignee: Massachuesetts Institute of Technology
Current Assignee: Massachuesetts Institute of Technology
Current Assignee Address: US MA Cambridge
Agency: Wolf, Greenfield & Sacks, P.C.
International Application: PCT/US2016/065288 WO 20161207
International Announcement: WO2017/100260 WO 20170615
Main IPC: H01L23/00
IPC: H01L23/00 ; H01L33/00 ; H01L33/06 ; H01L33/36

Abstract:

Light-emitting devices are disclosed. In some embodiments, the devices may emit light when a tunneling current is generated within the device.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）