A phase-change memory device includes a memory array including a first memory cell and a second memory cell, each comprising a phase-change element and a selector, connected respectively to a first local bitline and a second local bitline, which are in turn connected, respectively, to a first main bitline and a second main bitline. The parasitic capacitance of the main bitlines is precharged at a supply voltage. When the local bitlines are selected to access a respective logic datum stored in the phase-change element, the parasitic capacitance of the local bitlines is first charged using the charge previously stored in the parasitic capacitance of the main bitlines and then discharged through the respective phase-change elements. Reading of the logic datum is made by comparing the discharge times.