Caterpillar trenches for efficient wafer dicing
摘要:
A method for fabricating caterpillar trenches for wafer dicing includes forming at least one opening from a top surface of a mask formed on a substrate to a bottom surface of the mask opposite the top surface of the mask. The mask is formed on the substrate to protect an electronics device disposed on the substrate during isotropic etching. The method further includes isotropically etching through the at least one opening to form at least one wafer dicing channel, including isotropically etching a collection of nested trenches from a top surface of the substrate to a bottom surface of the substrate opposite the top surface of the substrate.
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