Invention Grant
- Patent Title: Microelectronic devices designed with high frequency communication devices including compound semiconductor devices integrated on a die fabric on package
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Application No.: US15776021Application Date: 2015-12-22
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Publication No.: US10573608B2Publication Date: 2020-02-25
- Inventor: Georgios C. Dogiamis , Telesphor Kamgaing , Eric J. Li , Javier A. Falcon , Yoshihiro Tomita , Vijay K. Nair , Shawna M. Liff
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2015/000156 WO 20151222
- International Announcement: WO2007/111766 WO 20170629
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/31 ; H01L23/498 ; H01L23/552 ; H01L25/16

Abstract:
Embodiments of the invention include a microelectronic device that includes a first die having a silicon based substrate and a second die coupled to the first die. In one example, the second die is formed with compound semiconductor materials. The microelectronic device includes a substrate that is coupled to the first die with a plurality of electrical connections. The substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
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Information query
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