Invention Grant
- Patent Title: Solder metallization stack and methods of formation thereof
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Application No.: US16163006Application Date: 2018-10-17
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Publication No.: US10573611B2Publication Date: 2020-02-25
- Inventor: Kamil Karlovsky , Evelyn Napetschnig , Michael Ehmann , Mark James Harrison , Anton Pugatschow
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/683
Abstract:
A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.
Public/Granted literature
- US20190051624A1 Solder Metallization Stack and Methods of Formation Thereof Public/Granted day:2019-02-14
Information query
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