Invention Grant
- Patent Title: Non-volatile memory device and method for fabricating the same
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Application No.: US16206035Application Date: 2018-11-30
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Publication No.: US10573657B2Publication Date: 2020-02-25
- Inventor: Seok Cheon Baek , Geun Won Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0065886 20180608
- Main IPC: H01L27/11575
- IPC: H01L27/11575 ; H01L27/11524 ; H01L27/11556 ; H01L27/11529 ; H01L27/11548 ; H01L27/1157 ; H01L21/768 ; H01L27/11573 ; H01L23/535 ; H01L27/11582 ; H01L21/28
Abstract:
A method for fabricating a non-volatile memory device is provided. The method includes forming a channel hole and a first contact hole simultaneously, several times, in order to achieve a desired a high aspect ratio.
Public/Granted literature
- US20190378852A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-12-12
Information query
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