Invention Grant
- Patent Title: Transistors incorporating metal quantum dots into doped source and drain regions
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Application No.: US16228620Application Date: 2018-12-20
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Publication No.: US10573756B2Publication Date: 2020-02-25
- Inventor: John H. Zhang
- Applicant: STMICROELECTRONICS, INC.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/775 ; H01L29/66 ; H01L29/40 ; H01L29/417 ; H01L29/778 ; H01L29/41 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/12 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/165
Abstract:
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the quantum dots are incorporated into epitaxially doped source and drain regions.
Public/Granted literature
- US20190181270A1 TRANSISTORS INCORPORATING METAL QUANTUM DOTS INTO DOPED SOURCE AND DRAIN REGIONS Public/Granted day:2019-06-13
Information query
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