A pressure sensor includes a semiconductor layer, a gate electrode, a gate insulating layer, and a source electrode, and may be incorporated as a switching transistor in a display device. The gate electrode is configured to overlap the semiconductor layer. The gate insulating layer is disposed between the semiconductor layer and the gate electrode and includes a first insulating layer disposed on a surface of the semiconductor layer that faces the gate electrode and a second insulating layer comprising an elastic material disposed at least between the first insulating layer and the gate electrode. The source electrode and a drain electrode respectively coupled to spaced portions of the semiconductor layer.