Invention Grant
- Patent Title: Ruthenium precursors for ALD and CVD thin film deposition and uses thereof
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Application No.: US15831621Application Date: 2017-12-05
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Publication No.: US10577386B2Publication Date: 2020-03-03
- Inventor: Benjamin Schmiege , Jeffrey W. Anthis , David Thompson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C07F15/00 ; C23C16/34 ; C23C16/50 ; C23C16/455 ; C23C16/40
Abstract:
Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
Public/Granted literature
- US20180155379A1 Ruthenium Precursors For ALD And CVD Thin Film Deposition And Uses Thereof Public/Granted day:2018-06-07
Information query
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