Invention Grant
- Patent Title: Memory device and reclaiming method of the memory device
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Application No.: US16120832Application Date: 2018-09-04
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Publication No.: US10579286B2Publication Date: 2020-03-03
- Inventor: Hee-Tai Oh , Walter Jun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0150280 20171113
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/06 ; G11C29/52 ; G06F11/10

Abstract:
A memory device includes a nonvolatile memory having a first block and a memory controller configured to exchange data with the nonvolatile memory. The memory controller includes a first processor to divide the first block into first and second domains, a second processor to generate a reclaim signal by determining whether to perform reclaiming on each of the first and second domains and a third processor performer which reclaims each of the first and second domains according to the reclaim signal and merges the first and second domains.
Public/Granted literature
- US20190146688A1 MEMORY DEVICE AND RECLAIMING METHOD OF THE MEMORY DEVICE Public/Granted day:2019-05-16
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