Invention Grant
- Patent Title: Low-noise amplifier (LNA) transformer notch
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Application No.: US16519877Application Date: 2019-07-23
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Publication No.: US10581385B2Publication Date: 2020-03-03
- Inventor: Makar Snai , Manohar Seetharam , Ehab Abdel Ghany , Vinod Panikkath
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H03F1/26
- IPC: H03F1/26 ; H04B1/16 ; H03F3/193 ; H04B1/10

Abstract:
Certain aspects of the present disclosure are directed to a circuit for signal processing. The circuit generally includes a first transformer having a first inductive element magnetically coupled with a second inductive element, and a second transformer having a third inductive element magnetically coupled with a fourth inductive element, wherein the first inductive element is coupled in series with the third inductive element. In certain aspects, the circuit also includes a first switch coupled in parallel with the third inductive element, a capacitive element coupled in parallel with the fourth inductive element, wherein a notch is formed at least by the capacitive element and the fourth inductive element, the notch circuit coupled in series with the second inductive element, and a second switch coupled in parallel with the fourth inductive element.
Public/Granted literature
- US20200036345A1 LOW-NOISE AMPLIFIER (LNA) TRANSFORMER NOTCH Public/Granted day:2020-01-30
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