Invention Grant
- Patent Title: RF switch with split tunable matching network
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Application No.: US16029333Application Date: 2018-07-06
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Publication No.: US10581387B2Publication Date: 2020-03-03
- Inventor: Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent John Land, Esq.
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H03F3/19 ; H03F3/213 ; H03F3/195

Abstract:
An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
Public/Granted literature
- US20190140602A1 RF Switch with Split Tunable Matching Network Public/Granted day:2019-05-09
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