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公开(公告)号:US10700658B2
公开(公告)日:2020-06-30
申请号:US16029364
申请日:2018-07-06
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
IPC: H04B1/04 , H04B1/40 , H01B1/00 , H04W88/06 , H03H7/38 , H03H7/01 , H04B1/00 , H04W72/04 , H04W28/06 , H04L5/00
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号:US10038414B2
公开(公告)日:2018-07-31
申请号:US15372260
申请日:2016-12-07
Applicant: pSemi Corporation
Inventor: Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
CPC classification number: H03F1/56 , H03F3/19 , H03F3/195 , H03F3/213 , H03F2200/378 , H03F2200/387 , H03F2200/451
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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公开(公告)号:US20230246602A1
公开(公告)日:2023-08-03
申请号:US18163755
申请日:2023-02-02
Applicant: pSemi Corporation
Inventor: Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
CPC classification number: H03F1/56 , H03F3/19 , H03F3/195 , H03F3/213 , H03F2200/451 , H03F2200/387 , H03F2200/378
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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公开(公告)号:US11251765B2
公开(公告)日:2022-02-15
申请号:US16852275
申请日:2020-04-17
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
IPC: H04B1/04 , H04B1/40 , H01B1/00 , H04W88/06 , H03H7/38 , H03H7/01 , H04B1/00 , H04W72/04 , H04W28/06 , H04L5/00
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号:US11005432B2
公开(公告)日:2021-05-11
申请号:US16752330
申请日:2020-01-24
Applicant: pSemi Corporation
Inventor: Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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公开(公告)号:US10581387B2
公开(公告)日:2020-03-03
申请号:US16029333
申请日:2018-07-06
Applicant: pSemi Corporation
Inventor: Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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公开(公告)号:US20250150052A1
公开(公告)日:2025-05-08
申请号:US19017638
申请日:2025-01-11
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号:US20220231654A1
公开(公告)日:2022-07-21
申请号:US17669789
申请日:2022-02-11
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号:US20200321935A1
公开(公告)日:2020-10-08
申请号:US16852275
申请日:2020-04-17
Applicant: pSemi Corporation
Inventor: Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号:US10171076B2
公开(公告)日:2019-01-01
申请号:US15618584
申请日:2017-06-09
Applicant: pSemi Corporation
Inventor: Michael Conry , Kevin Roberts , Edward Nicholas Comfoltey
IPC: H03K17/693 , H04B1/48 , H04B1/44
Abstract: A FET-based RF switch architecture and method that provides for independent control of FETs within component branches of a switching circuit. With independent control of branch FETs, every RF FET in an inactive branch that is in an “open” (capacitive) state can be shunted to RF ground and thus mitigate impedance mismatch effects. Providing a sufficiently low impedance to RF ground diminishes such negative effects and reduces the sensitivity of the switch circuit to non-matched impedances.
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