Invention Grant
- Patent Title: Integrated circuit devices including a vertical memory device
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Application No.: US16410266Application Date: 2019-05-13
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Publication No.: US10586766B2Publication Date: 2020-03-10
- Inventor: Young-jin Jung , Joon-hee Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0092733 20170721
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L27/11582 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157

Abstract:
Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.
Public/Granted literature
- US20190267321A1 INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL MEMORY DEVICE Public/Granted day:2019-08-29
Information query
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