公开(公告)号：US20200176375A1

公开(公告)日：2020-06-04

申请号：US16784900

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Jung ,  Joon-hee Lee

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

公开(公告)号：US10811356B2

公开(公告)日：2020-10-20

申请号：US16784900

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Jung ,  Joon-hee Lee

IPC: H01L23/00 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

公开(公告)号：US10586766B2

公开(公告)日：2020-03-10

申请号：US16410266

申请日：2019-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Jung ,  Joon-hee Lee

IPC: H01L23/52 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

公开(公告)号：US11133327B2

公开(公告)日：2021-09-28

申请号：US16383855

申请日：2019-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jin Jung ,  Hyoung-ryeol In ,  Sung-han Cho

IPC: H01L27/11582 ,  H01L23/535 ,  H01L29/10

Abstract: A three-dimensional semiconductor device includes: a common source line passing between a first channel structure and a second channel structure and between a first dummy channel structure and a second dummy channel structure, in which a distance in a first direction between the common source line and the first channel structure is equal to a distance in the first direction between the common source line and the second channel structure, and a distance in the first direction between the common source line and the first dummy channel structure is different from a distance in the first direction between the common source line and the second dummy channel structure.

公开(公告)号：US20190267321A1

公开(公告)日：2019-08-29

申请号：US16410266

申请日：2019-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Jung ,  Joon-hee LEE

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11556

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

公开(公告)号：US10312191B2

公开(公告)日：2019-06-04

申请号：US15923737

申请日：2018-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Jung ,  Joon-hee Lee

IPC: H01L23/528 ,  H01L27/11582 ,  H01L27/11556

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality or bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.