Invention Grant
- Patent Title: Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
-
Application No.: US15712185Application Date: 2017-09-22
-
Publication No.: US10586914B2Publication Date: 2020-03-10
- Inventor: Lin Xue , Sajjad Amin Hassan , Mahendra Pakala , Jaesoo Ahn
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/08 ; H01L43/12

Abstract:
A process sequence is provided to provide an ultra-smooth (0.2 nm or less) bottom electrode surface for depositing magnetic tunnel junctions thereon. In one embodiment, the sequence includes forming a bottom electrode pad through bulk layer deposition followed by patterning and etching. Oxide is then deposited over the formed bottom electrode pads and polished back to expose the bottom electrode pads. A bottom electrode buff layer is then deposited thereover following a pre-clean operation. The bottom electrode buff layer is then exposed to a CMP process to improve surface roughness. An MTJ deposition is then performed over the bottom electrode buff layer.
Public/Granted literature
- US20180108831A1 METHOD OF FORMING ULTRA-SMOOTH BOTTOM ELECTRODE SURFACE FOR DEPOSITING MAGNETIC TUNNEL JUNCTIONS Public/Granted day:2018-04-19
Information query
IPC分类: