Invention Grant
- Patent Title: Drive circuit of power semiconductor switch
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Application No.: US16445483Application Date: 2019-06-19
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Publication No.: US10587258B2Publication Date: 2020-03-10
- Inventor: Jianping Ying , Ming Wang , Xiaobo Huang , Jun Liu , Zhiming Hu
- Applicant: Delta Electronics, Inc.
- Applicant Address: CN Taoyuan, Taiwan
- Assignee: Delta Electronics, Inc.
- Current Assignee: Delta Electronics, Inc.
- Current Assignee Address: CN Taoyuan, Taiwan
- Agent Yunling Ren
- Priority: CN201810631947 20180619
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H03K17/61 ; H03K17/567

Abstract:
A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.
Public/Granted literature
- US20190386651A1 DRIVE CIRCUIT OF POWER SEMICONDUCTOR SWITCH Public/Granted day:2019-12-19
Information query
IPC分类: