Abstract:
The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.
Abstract:
The present application discloses a laminated busbar arrangement for use in a three-level power converter and a power converter. The laminated busbar arrangement comprises a first layer of busbar comprising a neutral-point sub busbar congfigured to make electrical connections between respective components in the three-level power converter and a neutral-point potential; a second layer of busbar comprising a plurality of sub busbars congfigured to make electrical connections between the respective components in the three-level power converter and a positive direct current (DC) input, a negative DC input and an alternating current (AC) input/output in the three-level power converter, and between respective semiconductor switching components. The present application may effectively reduce stray inductance.
Abstract:
A transformer includes a magnetic core, a first winding and at least one second winding. The magnetic core has a window through which the first winding passes through without contacting the magnetic core. The second winding passes through the window of the magnetic core and is wound on the magnetic core. The second winding has a distance from the first winding, and the second winding has a first insulating part disposed on an outer surface of the second winding facing the first winding.
Abstract:
A ground fault detection method for a power converter is provided, including: measuring, by a voltage sensor, a first voltage and a second voltage respectively, and converting the first voltage and the second voltage into a first digital voltage signal and a second digital voltage signal; receiving, by a controller, the first digital voltage signal and the second digital voltage signal, extracting a corresponding feature quantity of the first voltage and a corresponding feature quantity of the second voltage according to the first digital voltage signal and the second digital voltage signal; and further determining a type of the ground fault of the power converter and locating a ground fault; and when the power converter has a ground fault, shutting down the power converter.
Abstract:
A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.
Abstract:
The present disclosure provides a precharge device and a frequency converter. The precharge device is applied in a flying capacitor type multi-level converter circuit, and the multi-level converter circuit includes: a flying capacitor, a bus capacitor, a first and second semiconductor components, wherein the first semiconductor component is electrically connected between a first end of the flying capacitor and a first end of the bus capacitor, and the second semiconductor component is electrically connected between a second end of the flying capacitor and a second end of the bus capacitor; and the precharge device includes: an AC source; and an auxiliary circuit electrically connected with the AC source, wherein the auxiliary circuit reuses the first and second semiconductor components, and the AC source charges the flying capacitor and the bus capacitor through the auxiliary circuit.
Abstract:
A transformer includes a magnetic core, a first winding and at least one second winding. The magnetic core has a window through which the first winding passes through without contacting the magnetic core. The second winding passes through the window of the magnetic core and is wound on the magnetic core. The second winding has a distance from the first winding, and a semi-conductive part is disposed between the second winding and the magnetic core. The present disclosure can effectively lower the risk of partial discharge between the second winding and the magnetic core, and thus the transformer of the present disclosure has high reliability.
Abstract:
A magnetic assembly includes a magnetic core and a winding. The magnetic core comprises an upper cover, a lower cover and at least one core column provided between the upper cover and the lower cover, the core column presents a prismatic shape and has at least two lateral surfaces, the lateral surfaces intersect with each other to form at least two longitudinal ridges, and the longitudinal ridge extends along the longitudinal direction of the core column. The winding, winding around the core column, a first semi-conductive component is provided between the core column and the winding at the position corresponding to the longitudinal ridge.
Abstract:
The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.
Abstract:
The present application discloses a laminated busbar arrangement for use in a three-level power converter and a power converter. The laminated busbar arrangement comprises a first layer of busbar comprising a neutral-point sub busbar configured to make electrical connections between respective components in the three-level power converter and a neutral-point potential; a second layer of busbar comprising a plurality of sub busbars configured make electrical connections between the respective components in the three-level power converter and a positive direct current (DC) input, a negative DC input and an alternating current (AC) input/output in the three-level power converter, and between respective semiconductor switching components. The present application may effectively reduce stray inductance.