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公开(公告)号：US10587258B2
公开(公告)日：2020-03-10
申请号：US16445483
申请日：2019-06-19
Applicant: Delta Electronics, Inc.
Inventor： Jianping Ying , Ming Wang , Xiaobo Huang , Jun Liu , Zhiming Hu
IPC: H03K17/082 , H03K17/61 , H03K17/567
Abstract: A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.
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Patent Agency Ranking
公开(公告)号：US09642587B2
公开(公告)日：2017-05-09
申请号：US15000115
申请日：2016-01-19
Applicant: DELTA ELECTRONICS, INC.
Inventor： Hongyuan Jin , Jun Liu , Dezhi Jiao
CPC classification number: A61B6/54 , H02M3/156 , H02M3/3353 , H02M3/3378 , H02M2001/0058 , H02M2001/007 , Y02B70/1491
Abstract: A power supply device includes a power supply module, a high voltage conversion module and a control module. The high voltage conversion module includes a first high-voltage output module and a second high-voltage output module both connected to the power supply module. The control module is connected to the first high-voltage output module and the second high-voltage output module to respectively sample a first output voltage of the first high-voltage output module and a second output voltage of the second high-voltage output module and generate a power control signal, a first control signal and a second control signal respectively used to control the power supply module, the first high-voltage output module and the second high-voltage output module. There is a phase difference between the first control signal and the second control signal to interleaving control the first high-voltage output module and the second high-voltage output module.
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公开(公告)号：US12009695B2
公开(公告)日：2024-06-11
申请号：US17886305
申请日：2022-08-11
Applicant: Delta Electronics, Inc.
Inventor： Jun Chen , Tsu-Hua Ai , Changyong Wang , Yansong Lu , Jun Liu
CPC classification number: H02J9/062 , H02J7/0048 , H02J7/00712 , H02J7/04
Abstract: A power conversion system is coupled between a power grid and a load. The power conversion system includes a battery, a first converter, a second converter and a DC/DC converter. The first converter is configured to selectively convert an input power from the power grid into a first charging power when the power grid is operated normally. The second converter is configured to convert the input power from the power grid into an output power when the power grid is operated normally. The DC/DC converter is electrically connected between the battery and the second converter. The DC/DC converter is configured to convert a storage power in the battery into a backup power when the power grid is not operated normally.
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公开(公告)号：US10727664B2
公开(公告)日：2020-07-28
申请号：US16410151
申请日：2019-05-13
Applicant: Delta Electronics, Inc.
Inventor： Teng Liu , Yong Zeng , Jianping Ying , Ming Wang , Xiaobo Huang , Jun Liu
Abstract: The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.
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公开(公告)号：US20230068452A1
公开(公告)日：2023-03-02
申请号：US17886305
申请日：2022-08-11
Applicant: Delta Electronics, Inc.
Inventor： Jun Chen , Tsu-Hua Ai , Changyong Wang , Yansong Lu , Jun Liu
Abstract: A power conversion system is coupled between a power grid and a load. The power conversion system includes a battery, a first converter, a second converter and a DC/DC converter. The first converter is configured to selectively convert an input power from the power grid into a first charging power when the power grid is operated normally. The second converter is configured to convert the input power from the power grid into an output power when the power grid is operated normally. The DC/DC converter is electrically connected between the battery and the second converter. The DC/DC converter is configured to convert a storage power in the battery into a backup power when the power grid is not operated normally.
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公开(公告)号：US10886912B2
公开(公告)日：2021-01-05
申请号：US16391436
申请日：2019-04-23
Applicant: Delta Electronics,Inc.
Inventor： Jianping Ying , Ming Wang , Xiaobo Huang , Jun Liu
Abstract: The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.
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