Invention Grant
- Patent Title: Coordinated in-module RAS features for synchronous DDR compatible memory
-
Application No.: US15213386Application Date: 2016-07-18
-
Publication No.: US10592114B2Publication Date: 2020-03-17
- Inventor: Mu-Tien Chang , Dimin Niu , Hongzhong Zheng , Sun Young Lim , Indong Kim , Jangseok Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G11C29/52 ; G06F11/10 ; G11C29/04 ; G11C11/406 ; G11C5/04

Abstract:
A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.
Public/Granted literature
- US20170255383A1 COORDINATED IN-MODULE RAS FEATURES FOR SYNCHRONOUS DDR COMPATIBLE MEMORY Public/Granted day:2017-09-07
Information query