Invention Grant
- Patent Title: Semiconductor memory device and detection clock pattern generating method thereof
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Application No.: US16274860Application Date: 2019-02-13
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Publication No.: US10593387B2Publication Date: 2020-03-17
- Inventor: Su Yeon Doo , Seungjun Bae , Sihong Kim , Hosung Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0147510 20121217
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C8/18 ; G11C5/04 ; G11C7/22 ; G11C11/4076 ; G06F11/10 ; G11C29/04

Abstract:
A clock pattern generating method of a semiconductor memory device is provided. The method includes generating the same clock pattern through a plurality of detection clock output pins when an output selection control signal is in a first state and generating clock patterns different from each other through the plurality of detection clock output pins when the output selection control signal is in a second state different from the first state.
Public/Granted literature
- US20190180806A1 SEMICONDUCTOR MEMORY DEVICE AND DETECTION CLOCK PATTERN GENERATING METHOD THEREOF Public/Granted day:2019-06-13
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