Invention Grant
- Patent Title: Isolated well contact in semiconductor devices
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Application No.: US15636173Application Date: 2017-06-28
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Publication No.: US10593752B2Publication Date: 2020-03-17
- Inventor: Bruce Lynn Pickelsimer , Patrick Robert Smith , Terry James Bordelon, Jr.
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawewnce J. Bassuk; Charles A. Brill; Frank A. Brill
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/788 ; H01L29/66 ; H01L21/225 ; H01L21/306 ; H01L21/283 ; H01L29/78 ; H01L21/265
Abstract:
An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.
Public/Granted literature
- US20170301754A1 ISOLATED WELL CONTACT IN SEMICONDUCTOR DEVICES Public/Granted day:2017-10-19
Information query
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