公开(公告)号：US10593752B2

公开(公告)日：2020-03-17

申请号：US15636173

申请日：2017-06-28

Applicant: Texas Instruments Incorporated

Inventor： Bruce Lynn Pickelsimer ,  Patrick Robert Smith ,  Terry James Bordelon, Jr.

IPC: H01L29/06 ,  H01L29/788 ,  H01L29/66 ,  H01L21/225 ,  H01L21/306 ,  H01L21/283 ,  H01L29/78 ,  H01L21/265

Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.

公开(公告)号：US09722021B2

公开(公告)日：2017-08-01

申请号：US14843082

申请日：2015-09-02

Applicant: Texas Instruments Incorporated

Inventor： Bruce Lynn Pickelsimer ,  Patrick Robert Smith ,  Terry James Bordelon, Jr.

IPC: H01L21/225 ,  H01L29/06 ,  H01L29/788 ,  H01L29/66 ,  H01L21/306 ,  H01L21/283

CPC classification number: H01L29/0649 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/7833 ,  H01L29/788

Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.

公开(公告)号：US20170301754A1

公开(公告)日：2017-10-19

申请号：US15636173

申请日：2017-06-28

Applicant: Texas Instruments Incorporated

Inventor： Bruce Lynn Pickelsimer ,  Patrick Robert Smith ,  Terry James Bordelon, JR.

IPC: H01L29/06 ,  H01L21/225 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L29/0649 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/7833 ,  H01L29/788

Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.

公开(公告)号：US20170062558A1

公开(公告)日：2017-03-02

申请号：US14843082

申请日：2015-09-02

Applicant: Texas Instruments Incorporated

Inventor： Bruce Lynn Pickelsimer ,  Patrick Robert Smith ,  Terry James Bordelon, JR.

IPC: H01L29/06 ,  H01L21/283 ,  H01L21/225 ,  H01L21/306 ,  H01L29/788 ,  H01L29/66

CPC classification number: H01L29/0649 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/7833 ,  H01L29/788

Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.

Abstract translation: 集成电路和方法具有隔离的井，具有改进的隔离阱接触。 阱隔离扩散通过隔离晶体管栅极从隔离阱内的相反导电类型的器件扩散隔离。