Invention Grant
- Patent Title: LDMOS with high-k drain STI dielectric
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Application No.: US15720616Application Date: 2017-09-29
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Publication No.: US10593773B2Publication Date: 2020-03-17
- Inventor: Umamaheswari Aghoram , Pushpa Mahalingam , Alexei Sadovnikov , Eugene C Davis
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/02 ; H01L29/221 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/762 ; H01L29/40 ; H01L21/761 ; H01L29/10
Abstract:
A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure is formed between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon dioxide.
Public/Granted literature
- US20190103471A1 LDMOS WITH HIGH-K DRAIN STI DIELECTRIC Public/Granted day:2019-04-04
Information query
IPC分类:
