- 专利标题： Forming replacement low-K spacer in tight pitch fin field effect transistors
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申请号： US15222261申请日： 2016-07-28
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公开(公告)号： US10593780B2公开(公告)日： 2020-03-17
- 发明人: Xiuyu Cai , Chun-Chen Yeh , Qing Liu , Ruilong Xie
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC. , STMicroelectronics, Inc.
- 申请人地址： US NY Armonk KY Grand Cayman US TX Coppell
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- 当前专利权人地址： US NY Armonk KY Grand Cayman US TX Coppell
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L29/78 ; H01L29/66 ; H01L29/417 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/165
摘要：
A semiconductor device that a fin structure, and a gate structure present on a channel region of the fin structure. A composite spacer is present on a sidewall of the gate structure including an upper portion having a first dielectric constant, a lower portion having a second dielectric constant that is less than the first dielectric constant, and an etch barrier layer between sidewalls of the first and second portion of the composite spacer and the gate structure. The etch barrier layer may include an alloy including at least one of silicon, boron and carbon.
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