Invention Grant
- Patent Title: Formation of SiOC thin films
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Application No.: US15588026Application Date: 2017-05-05
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Publication No.: US10600637B2Publication Date: 2020-03-24
- Inventor: Toshiya Suzuki , Viljami J. Pore , Hannu Huotari
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: C23C16/30
- IPC: C23C16/30 ; C23C16/455 ; H01L21/02 ; C23C16/32 ; C23C16/40 ; C23C16/44

Abstract:
Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.
Public/Granted literature
- US20170323782A1 FORMATION OF SiOC THIN FILMS Public/Granted day:2017-11-09
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