Invention Grant
- Patent Title: Folded metal-oxide-metal capacitor overlapped by on-chip inductor/transformer
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Application No.: US16006657Application Date: 2018-06-12
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Publication No.: US10600731B2Publication Date: 2020-03-24
- Inventor: Haitao Cheng , Zhang Jin
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L23/522 ; H01L23/528 ; H01L49/02 ; H03H1/00

Abstract:
An integrated circuit includes a capacitor (e.g., a folded metal-oxide-metal (MOM) capacitor) formed in the lower BEOL interconnect levels, without degrading an inductor's Q-factor. The integrated circuit includes the capacitor in one or more back-end-of-line (BEOL) interconnect levels. The capacitor includes multiple folded capacitor fingers having multiple sides and a pair of manifolds on a same side of the folded capacitor fingers. Each of the pair of manifolds is coupled to one or more of the folded capacitor fingers. The integrated circuit also includes an inductive trace having one or more turns in one or more different BEOL interconnect levels. The inductive trace overlaps one or more portions of the capacitor.
Public/Granted literature
- US20190259701A1 FOLDED METAL-OXIDE-METAL CAPACITOR OVERLAPPED BY ON-CHIP INDUCTOR/TRANSFORMER Public/Granted day:2019-08-22
Information query
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