Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US14880275Application Date: 2015-10-11
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Publication No.: US10600882B2Publication Date: 2020-03-24
- Inventor: Ching-Wen Hung , Chih-Sen Huang , Yi-Wei Chen , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510577374 20150911
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/49 ; H01L29/423

Abstract:
A semiconductor structure is disclosed. The semiconductor structure includes a substrate, and an interlayer dielectric disposed on the substrate which has agate structure therein. The gate structure further includes a gate electrode with a protruding portion, and a gate dielectric layer disposed between the gate electrode and the substrate. A spacer is disposed between the interlayer dielectric and the gate electrode. An insulating cap layer is disposed atop the gate electrode and encompasses the top and the sidewall of the protruding portion.
Public/Granted literature
- US20170077257A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2017-03-16
Information query
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