Invention Grant
- Patent Title: Nonvolatile memory devices and methods of controlling the same
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Application No.: US15684252Application Date: 2017-08-23
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Publication No.: US10606760B2Publication Date: 2020-03-31
- Inventor: Elona Erez , Avner Dor , Moshe Twitto , Jun Jin Kong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: G06F12/1009
- IPC: G06F12/1009 ; G06F12/02

Abstract:
A memory system includes a nonvolatile memory device having a plurality of physical sectors, a mapping table, and a memory controller including a plurality of hash functions. The memory controller is configured to access the physical sectors using the mapping table and the hash functions. The memory controller is configured to receive a sequence of logical block addresses (LBAs) from a host and logical sector data for each of the LBAs, generate a first virtual address by operating a selected hash function among the hash functions on a first logical block address (LBA) among the sequence, compress the logical sector data to generate compressed data, and store the compressed data in a first physical sector among the physical sectors that is associated with the first virtual address.
Public/Granted literature
- US20190065392A1 NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING THE SAME Public/Granted day:2019-02-28
Information query
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