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公开(公告)号:US11791846B2
公开(公告)日:2023-10-17
申请号:US17314768
申请日:2021-05-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jae Hun Jang , Dong-Min Shin , Heon Hwa Cheong , Jun Jin Kong , Hong Rak Son , Se Jin Lim
CPC classification number: H03M13/37 , G06F11/085 , G06F11/1012 , G06F13/1673 , H03M13/03
Abstract: A decoder including a main memory, a flag memory and a decoding logic is provided. The flag memory is configured to store flag data and the decoding logic configured to perform an iteration. Further, the decoding logic is configured to: perform an ith operation using first data, wherein i is a natural number, flag-encode second data that is results obtained by performing the ith operation on the first data, store results obtained by performing the flag encoding on the second data in the flag memory as first flag data if the flag encoding succeeds, and store predetermined second flag data that is different from the first flag data of the second data in the flag memory if the flag encoding fails.
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公开(公告)号:US11200117B2
公开(公告)日:2021-12-14
申请号:US17029912
申请日:2020-09-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Myung Kyu Lee , Jun Jin Kong , Ki Jun Lee , Sung Hye Cho , Dae Hyun Kim , Yong Gyu Chu
Abstract: Disclosed are a semiconductor memory device, a controller, a memory system, and an operation method thereof. The semiconductor memory device includes a memory cell array including a plurality of memory cells, and an error correcting code (ECC) decoder configured to receive first data and a parity output from selected memory cells of the memory cell array. The ECC decoder generates a syndrome based on the first data and the parity, generates a decoding status flag (DSF) indicating a type of an error of the first data by the syndrome, and outputs the second data and the DSF to an external device outside of the semiconductor memory device when a read operation of the semiconductor memory device is performed.
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公开(公告)号:US10860233B2
公开(公告)日:2020-12-08
申请号:US16382374
申请日:2019-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Noam Livne , Jun Jin Kong
Abstract: A memory system may include a memory device configured to store data received from a host; and a memory controller configured to, receive a received block of the data and a logical address associated with the data from the host, detect at least one halves of the received block as being duplicate halves based on whether a respective one of the at least one halves of the received block match one or more existing halves of stored blocks stored in the memory device, selectively store the at least one halves of the received block in the memory device based on whether the respective one of the at least one halves are duplicate halves such that the duplicate halves of the received block are not stored in the memory device, and store metadata associated with retrieving the received block.
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公开(公告)号:US10606760B2
公开(公告)日:2020-03-31
申请号:US15684252
申请日:2017-08-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Elona Erez , Avner Dor , Moshe Twitto , Jun Jin Kong
IPC: G06F12/1009 , G06F12/02
Abstract: A memory system includes a nonvolatile memory device having a plurality of physical sectors, a mapping table, and a memory controller including a plurality of hash functions. The memory controller is configured to access the physical sectors using the mapping table and the hash functions. The memory controller is configured to receive a sequence of logical block addresses (LBAs) from a host and logical sector data for each of the LBAs, generate a first virtual address by operating a selected hash function among the hash functions on a first logical block address (LBA) among the sequence, compress the logical sector data to generate compressed data, and store the compressed data in a first physical sector among the physical sectors that is associated with the first virtual address.
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公开(公告)号:US10523367B2
公开(公告)日:2019-12-31
申请号:US15680661
申请日:2017-08-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eran Hof , Moshe Twitto , Jun Jin Kong
Abstract: A method of storing survivor data generated while decoding channel polarization codes in a memory module includes setting a list size that corresponds to a number of decoder units used to decode the channel polarization codes, inputting a stream of input bits to the decoder units, and sequentially decoding the input bits. Each input bit is decoded using all previous input bits decoded before the each input bit. The method further includes selecting a plurality of survivor bits from among the decoded input bits, and storing the selected survivor bits in the memory module in a binary tree configuration. The number of edges in each level of the binary tree configuration does not exceed the list size.
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公开(公告)号:US10381090B2
公开(公告)日:2019-08-13
申请号:US16003729
申请日:2018-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eun Chu Oh , Pilsang Yoon , Jun Jin Kong , Jisu Kim , Hong Rak Son , Jinbae Bang , Daeseok Byeon , Taehyun Song , Dongjin Shin , Dongsup Jin
Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
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公开(公告)号:US10324785B2
公开(公告)日:2019-06-18
申请号:US15652521
申请日:2017-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung-Rae Kim , Gyu Yeol Kong , Ki Jun Lee , Jun Jin Kong , Hong Rak Son , Beom Kyu Shin , Heon Hwa Cheong
Abstract: A decoder includes a channel mapper configured to generate a plurality of channel reception values based on hard decision information and soft decision information, a strong error detector configured to determine whether a strong error has occurred using a plurality of check node messages and the channel reception values and to correct the channel reception values according to a determination result to produce corrected channel reception values, a variable node unit configured to generate a plurality of variable node messages using the check node messages and the corrected channel reception values, and a check node unit configured to generate the check node messages using the variable node messages. The variable node unit includes a plurality of variable nodes and the check node unit includes a plurality of check nodes.
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公开(公告)号:US10127165B2
公开(公告)日:2018-11-13
申请号:US14801241
申请日:2015-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Amit Berman , Uri Beitler , Jun Jin Kong
Abstract: A memory system includes a first plurality of nonvolatile memory devices of a first channel of the memory system, the first plurality of memory devices each being connected to a first communications bus; a second plurality of nonvolatile memory devices of a second channel of the memory system, the second plurality of memory devices each being connected to a second communications bus, and a first interconnection between a first memory device and a second memory device, the first memory device being a memory device from among the first plurality of nonvolatile memory devices, the second memory device being a memory device from among the second plurality of nonvolatile memory devices.
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公开(公告)号:US10121543B2
公开(公告)日:2018-11-06
申请号:US15092108
申请日:2016-04-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun Chu Oh , Jun Jin Kong , Hong Rak Son , Pilsang Yoon
Abstract: A storage device includes a nonvolatile memory device including a plurality of memory cells, the memory cells divided into a plurality of pages, and a controller configured to control the nonvolatile memory device. The storage device is configured to collect two or more write data groups to be written to two or more pages, to simultaneously perform a common write operation with the two or more pages based on the two or more write data groups, and to sequentially perform an individual write operation with each of the two or more pages based on the two or more write data groups.
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公开(公告)号:US09941906B2
公开(公告)日:2018-04-10
申请号:US15047196
申请日:2016-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eran Hof , Jun Jin Kong
CPC classification number: H03M13/2924 , H03M13/13 , H03M13/134 , H03M13/618 , H03M13/6362 , H03M13/6516
Abstract: An apparatus for polar coding includes an encoder circuit that implements a transformation c=u1N-sBN-s{tilde over (M)}n, where u1N-s, BN-s, {tilde over (M)}n, and C are defined over a Galois field GF(2k), k>1, N=2k, s
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