Invention Grant
- Patent Title: DRAM sense amplifier active matching fill features for gap equivalence systems and methods
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Application No.: US16557688Application Date: 2019-08-30
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Publication No.: US10607690B2Publication Date: 2020-03-31
- Inventor: Steve V. Cole , Benjamin A. Millemon , Toby D. Robbs , J. W. Thompson
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/4091 ; G11C7/08 ; G11C11/4094 ; G11C11/408
Abstract:
A memory device may include a memory array with multiple memory cells and one or more sense amplifiers connected to the memory array. Each sense amplifier may include a matched pair of transistors. An active matching fill feature may also be included proximate to at least one transistor of the matched pair of transistors.
Public/Granted literature
- US20200075083A1 DRAM SENSE AMPLIFIER ACTIVE MATCHING FILL FEATURES FOR GAP EQUIVALENCE SYSTEMS AND METHODS Public/Granted day:2020-03-05
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