公开(公告)号：US20200075083A1

公开(公告)日：2020-03-05

申请号：US16557688

申请日：2019-08-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Steve V. Cole ,  Benjamin A. Millemon ,  Toby D. Robbs ,  J. W. Thompson

IPC: G11C11/4091 ,  G11C7/08 ,  G11C11/408 ,  G11C11/4094

Abstract: A memory device may include a memory array with multiple memory cells and one or more sense amplifiers connected to the memory array. Each sense amplifier may include a matched pair of transistors. An active matching fill feature may also be included proximate to at least one transistor of the matched pair of transistors.

公开(公告)号：US10607690B2

公开(公告)日：2020-03-31

申请号：US16557688

申请日：2019-08-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Steve V. Cole ,  Benjamin A. Millemon ,  Toby D. Robbs ,  J. W. Thompson

IPC: G11C7/00 ,  G11C11/4091 ,  G11C7/08 ,  G11C11/4094 ,  G11C11/408

Abstract: A memory device may include a memory array with multiple memory cells and one or more sense amplifiers connected to the memory array. Each sense amplifier may include a matched pair of transistors. An active matching fill feature may also be included proximate to at least one transistor of the matched pair of transistors.

公开(公告)号：US10418093B1

公开(公告)日：2019-09-17

申请号：US16118798

申请日：2018-08-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Steve V. Cole ,  Benjamin A. Millemon ,  Toby D. Robbs ,  J. W. Thompson

IPC: G11C7/00 ,  G11C11/4091 ,  G11C11/4094 ,  G11C7/08 ,  G11C11/408

Abstract: A memory device may include a memory array with multiple memory cells and one or more sense amplifiers connected to the memory array. Each sense amplifier may include a matched pair of transistors. An active matching fill feature may also be included proximate to at least one transistor of the matched pair of transistors.