Invention Grant
- Patent Title: Semiconductor device with p-type AlxInyGal-x-yN and ohmic electrode thereof
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Application No.: US15926636Application Date: 2018-03-20
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Publication No.: US10607840B2Publication Date: 2020-03-31
- Inventor: Takeshi Harada , Koji Utaka
- Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-188307 20150925
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L21/28 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/32 ; H01L29/06 ; H01L29/66 ; H01L29/10 ; H01L29/778 ; H01L21/285 ; H01L27/098 ; H01L29/808 ; H01L29/812 ; H01L29/20
Abstract:
A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.
Public/Granted literature
- US20180218910A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-08-02
Information query
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