公开(公告)号：US10607840B2

公开(公告)日：2020-03-31

申请号：US15926636

申请日：2018-03-20

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Takeshi Harada ,  Koji Utaka

IPC: H01L29/45 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/32 ,  H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/778 ,  H01L21/285 ,  H01L27/098 ,  H01L29/808 ,  H01L29/812 ,  H01L29/20

Abstract: A semiconductor device includes: a substrate; a p-type GaN layer that is formed above the substrate, and includes GaN containing p-type impurities; and a Ti film formed on a surface of the p-type GaN layer. The Ti film includes a Ti film containing no nitrogen and a nitrogen-containing Ti film that is less chemically active than such Ti film. The nitrogen-containing Ti film continuously surrounds an outer periphery of the Ti film containing no nitrogen in a planar view.