Invention Grant
- Patent Title: Method and system for fabricating semiconductor device
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Application No.: US14871846Application Date: 2015-09-30
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Publication No.: US10649336B2Publication Date: 2020-05-12
- Inventor: Jun-Yih Yu , Chang-Fa Lin , Ching-Hung Cheng , Yi-Chuan Lo , Ming-Hsuan Chuang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G03F7/30
- IPC: G03F7/30 ; G03F7/32 ; H01L27/11582 ; H01L49/02

Abstract:
A system for fabricating a semiconductor device includes a first supplier, a second supplier, a mixer, and an applier. The first supplier is configured to supply a developer solution having a first chemical. The second supplier is configured to supply the second chemical to the mixer. The mixer is configured to mix the developer solution with a second chemical, in which the second chemical is configured to form a plurality of bubbles in the developer solution. The applier is configured to apply the developer solution mixed with the bubbles onto a photoresist layer formed on a substrate, in which the photoresist layer has an exposed region, and the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction.
Public/Granted literature
- US20170092497A1 METHOD AND SYSTEM FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-30
Information query
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