Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15986797Application Date: 2018-05-22
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Publication No.: US10651040B2Publication Date: 2020-05-12
- Inventor: Tzu-Hao Liu , Yi-Wei Chen , Tsun-Min Cheng , Kai-Jiun Chang , Chia-Chen Wu , Yi-An Huang , Po-Chih Wu , Pin-Hong Chen , Chun-Chieh Chiu , Tzu-Chieh Chen , Chih-Chien Liu , Chih-Chieh Tsai , Ji-Min Lin
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1978362
- Main IPC: H01L21/28
- IPC: H01L21/28 ; G11C11/4097 ; H01L27/108
Abstract:
A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
Public/Granted literature
- US20190318933A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-10-17
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