- 专利标题： 3D integration using Al—Ge eutectic bond interconnect
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申请号： US15663242申请日： 2017-07-28
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公开(公告)号： US10651151B2公开(公告)日： 2020-05-12
- 发明人: Peter Smeys , Mozafar Maghsoudnia
- 申请人： InvenSense, Inc.
- 申请人地址： US CA San Jose
- 专利权人： InvenSense, Inc.
- 当前专利权人： InvenSense, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L25/065 ; H01L25/00 ; H01L23/00
摘要：
A method includes aligning a germanium feature on a first CMOS wafer with an aluminum feature on a second CMOS wafer. The aluminum feature and the germanium feature are pressed together. A eutectic bond is formed connecting the aluminum feature to the germanium feature. The eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium.
公开/授权文献
- US20170330863A1 3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT 公开/授权日：2017-11-16
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