Invention Grant
- Patent Title: Semiconductor device comprising a standard cell including a non-active fin area
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Application No.: US16245164Application Date: 2019-01-10
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Publication No.: US10651175B2Publication Date: 2020-05-12
- Inventor: Hiroyuki Shimbo
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@55b844e8
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/02 ; H01L27/06 ; H01L27/088 ; H01L29/66

Abstract:
Disclosed herein is a semiconductor device including two standard cells which are arranged adjacent to each other in an X direction. One of the two standard cells includes a plurality of first fins which extend in the X direction, and which are arranged along a boundary between the two standard cells in a Y direction. The other standard cell includes a plurality of second fins which extend in the X direction, and which are arranged along the boundary between the two standard cells in the Y direction. The plurality of second fins includes a dummy fin.
Public/Granted literature
- US20190148380A1 SEMICONDUCTOR DEVICE COMPRISING A STANDARD CELL Public/Granted day:2019-05-16
Information query
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