- Patent Title: Thin film transistor array substrate and fabricating method thereof
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Application No.: US16524606Application Date: 2019-07-29
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Publication No.: US10651210B2Publication Date: 2020-05-12
- Inventor: Jee Hoon Kim , Shin Hyuk Yang , Yong Hoon Won , Kwang Soo Lee
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3edc6ee3
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L29/786

Abstract:
A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.
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