公开(公告)号：US10651210B2

公开(公告)日：2020-05-12

申请号：US16524606

申请日：2019-07-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jee Hoon Kim ,  Shin Hyuk Yang ,  Yong Hoon Won ,  Kwang Soo Lee

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.

公开(公告)号：US10411046B2

公开(公告)日：2019-09-10

申请号：US15601338

申请日：2017-05-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jee Hoon Kim ,  Shin Hyuk Yang ,  Yong Hoon Won ,  Kwang Soo Lee

IPC: H01L27/12 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.