Invention Grant
- Patent Title: Gallium nitride containing laser device configured on a patterned substrate
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Application No.: US16252833Application Date: 2019-01-21
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Publication No.: US10651629B1Publication Date: 2020-05-12
- Inventor: Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/02
- IPC: H01S5/02 ; H01S5/343 ; H01L21/02 ; H01S5/22 ; H01S5/227 ; H01S5/30 ; H01S5/10 ; H01S5/042 ; H01S5/32

Abstract:
A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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