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公开(公告)号：US10923878B1
公开(公告)日：2021-02-16
申请号：US16707735
申请日：2019-12-09
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew C. Schmidt , Yu-Chia Chang
IPC: H01S5/042 , H01S5/20 , H01S5/34 , H01L33/00 , B82Y20/00 , H01S5/32 , H01L33/06 , H01S5/22 , H01S5/065 , H01S5/343 , H01S5/40
Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
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公开(公告)号：US10862272B1
公开(公告)日：2020-12-08
申请号：US16715761
申请日：2019-12-16
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew C. Schmidt , Bryan Ellis
Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
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公开(公告)号：US09142935B2
公开(公告)日：2015-09-22
申请号：US14264786
申请日：2014-04-29
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Nick Pfister , Yu-Chia Chang , Mathew C. Schmidt , Drew Felker
IPC: H01S5/02 , H01L33/20 , H01S5/32 , H01S5/343 , H01L21/02 , H01L21/268 , H01L21/302 , H01L21/428 , H01L33/00 , H01S5/10 , H01S5/22 , H01S5/30
CPC classification number: H01S5/0206 , H01L21/02016 , H01L21/268 , H01L21/302 , H01L21/428 , H01L33/005 , H01L33/0062 , H01L33/0095 , H01L33/20 , H01S5/0202 , H01S5/0207 , H01S5/1039 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/34333 , H01S2301/14
Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
Abstract translation: 描述了使用半极性或非极性含镓衬底发射电磁辐射的方法和装置，其中衬底的背面包括减少杂散光泄漏的多个划线。
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公开(公告)号：US09071039B2
公开(公告)日：2015-06-30
申请号：US14134244
申请日：2013-12-19
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz Elsass , Yu-Chia Chang
IPC: H01S5/00 , H01S5/22 , H01S5/02 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/028 , H01S5/20 , H01S5/32
CPC classification number: H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/34333
Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
Abstract translation: 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。
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公开(公告)号：US20140315340A1
公开(公告)日：2014-10-23
申请号：US14264786
申请日：2014-04-29
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Nick Pfister , Yu-Chia Chang , Mathew C. Schmidt , Drew Felker
IPC: H01L33/00
CPC classification number: H01S5/0206 , H01L21/02016 , H01L21/268 , H01L21/302 , H01L21/428 , H01L33/005 , H01L33/0062 , H01L33/0095 , H01L33/20 , H01S5/0202 , H01S5/0207 , H01S5/1039 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/34333 , H01S2301/14
Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
Abstract translation: 描述了使用半极性或非极性含镓衬底发射电磁辐射的方法和装置，其中衬底的背面包括减少杂散光泄漏的多个划线。
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Patent Agency Ranking
公开(公告)号：US09362720B1
公开(公告)日：2016-06-07
申请号：US14793339
申请日：2015-07-07
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew C. Schmidt , Yu-Chia Chang
CPC classification number: H01S5/0427 , B82Y20/00 , H01L33/0045 , H01L33/06 , H01S5/0425 , H01S5/0651 , H01S5/0652 , H01S5/2031 , H01S5/22 , H01S5/3202 , H01S5/34 , H01S5/3407 , H01S5/3414 , H01S5/34333 , H01S5/405 , H01S5/4087 , H01S2301/02
Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
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7.发明授权公开(公告)号：US09106049B1
公开(公告)日：2015-08-11
申请号：US14487638
申请日：2014-09-16
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew C. Schmidt , Yu-Chia Chang
CPC classification number: H01S5/0427 , B82Y20/00 , H01L33/0045 , H01L33/06 , H01S5/0425 , H01S5/0651 , H01S5/0652 , H01S5/2031 , H01S5/22 , H01S5/3202 , H01S5/34 , H01S5/3407 , H01S5/3414 , H01S5/34333 , H01S5/405 , H01S5/4087 , H01S2301/02
Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
Abstract translation: 描述了提供具有广谱的激光二极管的系统和方法。 具有宽或多峰频谱输出操作的GaN基激光二极管通过具有产生多峰频谱输出的单个激光二极管器件，以超亮度模式操作或通过使用RF源和/或反馈来获得各种配置 信号。 在一些其他实施例中，通过使多个激光器件输出不同波长的不同激光器来实现多峰输出。
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公开(公告)号：US09466949B1
公开(公告)日：2016-10-11
申请号：US14857719
申请日：2015-09-17
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
IPC: H01S5/02 , H01S5/22 , H01S5/343 , H01S5/227 , H01S5/32 , H01L21/02 , H01S5/30 , H01S5/042 , H01S5/10
CPC classification number: H01S5/34333 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0425 , H01S5/1082 , H01S5/2201 , H01S5/2275 , H01S5/3063 , H01S5/3202 , H01S2301/173 , H01S2304/12
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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公开(公告)号：US20140295595A1
公开(公告)日：2014-10-02
申请号：US14134244
申请日：2013-12-19
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz Elsass , Yu-Chia Chang
CPC classification number: H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/34333
Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
Abstract translation: 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。
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公开(公告)号：US10186841B1
公开(公告)日：2019-01-22
申请号：US15887217
申请日：2018-02-02
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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