Invention Grant
- Patent Title: Memory device and operation method thereof
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Application No.: US15841640Application Date: 2017-12-14
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Publication No.: US10657051B2Publication Date: 2020-05-19
- Inventor: Su-Chueh Lo , Chun-Yu Liao
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G06F12/06 ; G11C11/417 ; G11C11/16 ; G11C7/20 ; G11C7/10 ; G11C11/413 ; G11C29/50 ; G06F3/06

Abstract:
Provided is a memory device including: a memory array, including a flag memory array having a plurality of flag memory cells and a data memory array having a plurality of data memory cells, the corresponding flag memory cells being used to record whether the corresponding data memory cells have been written or not. In initialization, the flag memory array is initialized by the control circuit but the data memory array is not initialized.
Public/Granted literature
- US20190188131A1 MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2019-06-20
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