Invention Grant
- Patent Title: Patterning method utilizing dummy mandrel
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Application No.: US16024907Application Date: 2018-07-01
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Publication No.: US10658178B2Publication Date: 2020-05-19
- Inventor: Feng-Yi Chang , Fu-Che Lee , Ying-Chih Lin , Gang-Yi Lin
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@12fd92ac
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/027 ; H01L27/108
Abstract:
A method of forming a capacitor mask includes the following steps. A bulk mandrel and a plurality of strip mandrels are formed on a mask layer. Spacers are formed on sidewalls of the bulk mandrel and the strip mandrels. The strip mandrels are removed while the bulk mandrel is reserved. A material fills in space between the spacers and on the bulk mandrel, wherein the material has a flat top surface. A patterned photoresist is formed to cover the bulk mandrel and a part of the spacers but exposing the other part of the spacers after filling the material.
Public/Granted literature
- US20190385847A1 PATTERNING METHOD UTILIZING DUMMY MANDREL Public/Granted day:2019-12-19
Information query
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