Invention Grant
- Patent Title: Method of fin oxidation by flowable oxide fill and steam anneal to mitigate local layout effects
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Application No.: US16126621Application Date: 2018-09-10
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Publication No.: US10658224B2Publication Date: 2020-05-19
- Inventor: Huimei Zhou , Gen Tsutsui , Veeraraghavan S. Basker , Andrew M. Greene , Dechao Guo , Huiming Bu , Reinaldo Vega
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/762 ; H01L21/02 ; H01L21/306 ; H01L29/66 ; H01L29/78 ; H01L21/32
Abstract:
Integrated chips and methods of forming the same include oxidizing a portion of a semiconductor fin, which includes a channel layer and an intermediate semiconductor layer, to electrically isolate active regions of the semiconductor fin by forming an oxide that fully penetrates the channel layer and the intermediate semiconductor layer. A semiconductor device is formed on each of the active regions.
Public/Granted literature
- US20200083089A1 FIN OXIDATION BY FLOWABLE OXIDE FILL AND STEAM ANNEAL TO MITIGATE LOCAL LAYOUT EFFECTS Public/Granted day:2020-03-12
Information query
IPC分类:
