Invention Grant
- Patent Title: Redistribution layer metallic structure and method
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Application No.: US15937339Application Date: 2018-03-27
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Publication No.: US10658315B2Publication Date: 2020-05-19
- Inventor: Shih Wei Bih , Sheng-Wei Yeh , Yen-Yu Chen , Wen-Hao Cheng , Chih-Wei Lin , Chun-Chih Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/00

Abstract:
The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.
Public/Granted literature
- US20190304939A1 Redistribution Layer Metallic Structure and Method Public/Granted day:2019-10-03
Information query
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