- 专利标题： Polysilicon design for replacement gate technology
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申请号： US16557423申请日： 2019-08-30
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公开(公告)号： US10658492B2公开(公告)日： 2020-05-19
- 发明人: Harry-Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L29/66 ; H01L27/06 ; H01L27/092 ; H01L49/02 ; H01L29/78 ; H01L21/8238 ; H01L27/08
摘要：
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.
公开/授权文献
- US20190386116A1 Polysilicon Design for Replacement Gate Technology 公开/授权日：2019-12-19
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