A quantum-nano light emitting diode (Q-NED) pixel includes a switching transistor configured to transfer a data voltage in response to a scan signal, a storage capacitor configured to store the data voltage transferred by the switching transistor, a driving transistor coupled to a first power supply voltage line, and configured to generate a driving current based on the data voltage stored in the storage capacitor, a plurality of Q-NEDs configured to emit light based on the driving current, the Q-NEDs having an ohmic contact resistance at anodes and cathodes of the Q-NEDs, a first sensing transistor configured to couple the Q-NEDs to a sensing line in response to a sensing signal when a sensing operation for sensing the ohmic contact resistance of the Q-NEDs is performed, and a second sensing transistor configured to decouple the Q-NEDs from a second power supply line in response to an inverted sensing signal.